![]() ![]() 2.1, infineon IKVWW50N65F5 High speed switching series fifth generation Electrical Characteristic, at Ty = 25✬, unless otherwise specified e Value o Parameter Symbol |Conditions - Unit min. IGBT High speed 5 FAST IGBT in TRENCHSTOP"” 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKVV5ON65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet o rial Power C | infin eon IKW50N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOP"” 5 technology copacked with RAPID 1 fast and soft antiparallel diode Features and Benefits: Cc High speed F5 technology offering * Best-in-Class efficiency in hard switching and resonant topologies * 650V breakdown voltage & * Low gate charge Qc * IGBT copacked with RAPID 1 fast and soft antiparallel diode * Maximum junction temperature 175✬ * Qualified according to JEDEC for target applications * Pb-free lead plating RoHS compliant * Complete product spectrum and PSpice Models: http://figbt/ Applications: * Solar converters, * Uninterruptible power supplies * Welding converters * Mid to high range switching frequency converters Package pin definition: G * Pin 1- gate * Pin 2 & backside - colector * Pin 3 - emitter (3 » Green 6 Halogen-Free e “RoHS Key Performance and Package Parameters Type Ver te Vcesa, Ty=25✬ | Tvimax Marking Package IKW50N65F5 650V 50A 1.6V 175✬ K50EF5 PG-T0247-3 2 Rev. ![]() Baixe Infeneon transistor igbt e outras Esquemas em PDF para Eletrônica de Potência, somente na Docsity! Cinfineon. ![]()
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